Funded by the Sino-German Center for Research Promotion,the first Sino-German Symposium on "Defect Engineering in SiC Device Manufacturing-Atomistic Simulations, Characterization and Processing” (DESiC2019) was successfully held in Beijing, China from November 10 to 14, 2019. DESiC2019 was organized by Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Germany, and Tianjin University (TJU), China.
The DESiC2019 Symposium was co-chaired by Dr. Zongwei Xu from the State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, and Dr. Mathias Rommel from the Friedrich-Alexander-Universität Erlangen-Nürnberg / Fraunhofer Institute for Integrated Systems and Device Technology. More than 60 delegates joined the DESiC2019 symposium, including 12 German representatives from Helmholtz-Zentrum Dresden-Rossendorf, Fraunhofer Institute for Integrated Systems and Device Technology, Julius-Maximilian University of Würzburg, University of Münster, Friedrich-Alexander-Universität Erlangen-Nürnberg, Albert-Ludwigs-Universität Freiburg i. Br. and more than 50 Chinese representatives from Tsinghua University, Peking University, University of Science and Technology of China, Tianjin University, Dalian University of Technology, East China Normal University, Southeast University, Shandong University, Sichuan University, Lanzhou University, etc and 1 international representative from the National Research Council of Italy.
The delegates closely focused on the main topics of defect engineering in silicon carbide material and device fabrication, including atomistic simulation, characterization, processing and applications. During the DESiC2019 symposium, representatives also visited the laboratories of the Institute of Semiconductors in the Chinese Academy of Sciences, and the CISRI-Zhongke Energy Conservation and Technology Co., Ltd. The symposium has established a new communication and exchange mechanism for scientists from different disciplines like engineering, physics, chemistry and materials science, and is expected to establish a long-lasting and effective international cooperation platform between German and Chinese scientists in the research and application of a new generation of wide bandgap semiconductor materials and their devices.
Figure 1. Photo of the SGC directors Prof. Fan Yingjie (NSFC) and Dr. Karin Zach (DFG) as well as the participants of the first Sino-German bilateral workshop on "Defective Manufacturing of Silicon Carbide Devices - Atomic Scale Simulation, Characterization Analysis and Processing Methods".
By the School of Precision Instrument and Optoelectronics Engineering
Editors: Eva Yin & Doris Harrington
